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M.2 NVMe SSD 512GB GOODRAM IRDM, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s/ 2000 MB/s, Random 4K Read/Write 295K IOPS/ 500K IOPS, 8-Channel Phison E12 w/DRAM buffer, 3D NAND TLC

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M.2NVMeSSD512GBGOODRAMIRDM,Interface:PCIe3.0x4/NVMe1.3,M2Type2280formfactor,SequentialReads/Writes3200MB/s/2000MB/s,Random4KRead/Write295KIOPS/500KIOPS,8-ChannelPhisonE12w/DRAMbuffer,3DNANDTLC
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M.2 NVMe SSD 512GB GOODRAM IRDM, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s/ 2000 MB/s, Random 4K Read/Write 295K IOPS/ 500K IOPS, 8-Channel Phison E12 w/DRAM buffer, 3D NAND TLC

M.2 NVMe SSD 512GB GOODRAM IRDM, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s/ 2000 MB/s, Random 4K Read/Write 295K IOPS/ 500K IOPS, 8-Channel Phison E12 w/DRAM buffer, 3D NAND TLC Формфактор SSD M.2 Объем 512GB Интерфейс PCI Express 3.0 x4 Тип ячеек памяти 3D V-NAND (TLC)